In this module, you will develop an advanced understanding of the complexities and techniques used in RF-circuit design.  Using an industry-standard simulation design tool, you will learn how to apply advanced techniques to modern-day microwave and mm-wave circuit design, and specifically the design of a generic and low-noise MMIC amplifiers.  Following an introduction of key concepts, approaches to practical design are introduced, focussing on narrow-band, wide-band and low-noise designs, as well as the measurement techniques used. 

LO1. Formulate a critical understanding of the active and passive elements used in microwave and mm-wave circuits and understand their roles and functions. 

LO2. Critically assess the different approaches used in circuit design at high frequency and understand the RF design process for a monolithic microwave integrated circuit (MMIC). 

LO3. Implement advanced design features of modern advanced microwave engineering CAD tools, including linear, non-linear and electromagnetic simulation techniques, translating knowledge to synthesize real circuits, including their optimisation, visualisation and interpretation of data. 

LO4. Understand the approaches used in linear and non-linear modelling of active transistors, and to implement and evaluate these in circuit design. 

LO5. Translate theoretical understanding of linear amplifier design, including low-noise amplifiers to actual design using established design techniques. 

LO6. Translate an awareness of sources of measurement error, and the difficulties involved in measurement at very high (microwave and mm-wave) frequencies, into measurement results. 

The module will be delivered through a blend of online learning material, face-to-face guided study, tutorials, lab sessions and demonstrations.   Additional laboratory time will be provided for tours of facilities, industry talks and design-problem guidance. 

An overall module map is available in Learning Central.  Weekly module maps will be provided through module announcements from the module delivery team and will provide information regarding the structure and timing of activities for the coming week, as well as what is expected in terms of preparation, engagement with study tasks and attendance of face-to-face sessions. 

Graduate attribute of Critical Thinking  and Communication is developed in this module. 

• Microwave and mm-wave design approaches and concepts, initially using ideal circuit elements, and then realistic process design kits (PDKs) as used by industry. 

• Incorporating measured data into the CAD environment such that it is useful in the design process - turning initial design ideas into reality. 

• The advanced use of microwave CAD tools for optimal and time-efficient design, and an ability to analyse and compare data produced through simulation, in both ideal and realistic environments. 

• FET transistor characterisation and modelling at high (microwave and mm-wave) frequencies 

• Communication of complex design through written assessment and in lab-assessment. 

• Investigation of problems and an ability to offer effective solutions, reflecting on and learning from successes and failures. 

There are two assessments on the module:  

One summative assessment will be an individual Exam (60%) which covers MLO 1, 2, 4 and 6.  

Graduate attribute of Critical Thinking is developed here. 

Feedback on the summative exam will be provided in the form of generic cohort feedback and your individual grade. 

Formative opportunities will be provided through homework, tutorials and revision sessions.  

Feedback on formative work will be verbal in class. 

The second summative assessment will be Coursework 1 (20%) and Coursework 2 (20%) which covers MLO 3 and 5, consisting of design, simulation and analysis.  Reporting in a written form.  

Graduate attributes of Critical Thinking and Communication are developed here. 

Feedback on the coursework is provided with a written note through Learning Central highlighting the positive and negative points and suggesting ways of improving, and individual grades. See Appendix 1 and 2 for Assessment criteria.   

Formative opportunities and feedback will be provided through in-class oral discussion while you progress with the assignment.  

THE OPPORTUNITY FOR REASSESSMENT IN THIS MODULE:  

The opportunity for reassessment in this module will be set at component level. The remit of the reassessment will be set by the module leader mapped against the module learning outcomes. 

Opportunities for re-assessment is only permitted provided you have not failed more credit than in the resit rule adopted by your programme.  If the amount of credit you have failed is more than permitted by the relevant resit rule, you may be permitted to repeat study if you are within the threshold set for the Repeat rule adopted by your programme.  You will be notified of your eligibility to resit/repeat any modules after the Examining Board in the Summer period. 

• Measurement of scattering parameters: two-port measurement systems, calibration concepts. 

• Amplifier design basics; matching, stability, bias networks 

• Amplifier design issues; broadband design solutions 

• Noise Figure: definition and measurement.  Noise Parameters: definition, measurement and modelling 

• Low noise amplifier design 

• Transistor characterisation: CAD equivalent circuit modelling, figures of merit analysis. 

• Non-Linear behaviour: transistor models, power measurements and power amplifier design 

• RF CAD tools: design and analysis.  Utilisation of industry-standard RF CAD tools; advanced features of RF CAD tools, time-efficient RF design and analysis